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authorBrian Norris <computersforpeace@gmail.com>2012-09-25 05:40:49 +0200
committerDavid Woodhouse <David.Woodhouse@intel.com>2012-09-29 16:57:33 +0200
commit7e74c2d7141e8929049233e28c74cd089f6ae962 (patch)
treed811df16199367e4ebba1d6a6135cc9783e87c1e
parentmtd: nand: remove redundant ID read (diff)
downloadlinux-7e74c2d7141e8929049233e28c74cd089f6ae962.tar.xz
linux-7e74c2d7141e8929049233e28c74cd089f6ae962.zip
mtd: nand: split BB marker options decoding into its own function
When detecting NAND parameters, the code gets a little ugly so that the logic is obscured. Try to remedy that by moving code to separate functions that have well-defined purposes. This patch splits the bad block marker options detection into its own function, away from the other parameters (e.g., chip size, page size, etc.). Signed-off-by: Brian Norris <computersforpeace@gmail.com> Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
-rw-r--r--drivers/mtd/nand/nand_base.c66
1 files changed, 39 insertions, 27 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c
index 77b340068c6e..16bb17f93997 100644
--- a/drivers/mtd/nand/nand_base.c
+++ b/drivers/mtd/nand/nand_base.c
@@ -2906,6 +2906,43 @@ static int nand_flash_detect_onfi(struct mtd_info *mtd, struct nand_chip *chip,
}
/*
+ * Set the bad block marker/indicator (BBM/BBI) patterns according to some
+ * heuristic patterns using various detected parameters (e.g., manufacturer,
+ * page size, cell-type information).
+ */
+static void nand_decode_bbm_options(struct mtd_info *mtd,
+ struct nand_chip *chip, u8 id_data[8])
+{
+ int maf_id = id_data[0];
+
+ /* Set the bad block position */
+ if (mtd->writesize > 512 || (chip->options & NAND_BUSWIDTH_16))
+ chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
+ else
+ chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
+
+ /*
+ * Bad block marker is stored in the last page of each block on Samsung
+ * and Hynix MLC devices; stored in first two pages of each block on
+ * Micron devices with 2KiB pages and on SLC Samsung, Hynix, Toshiba,
+ * AMD/Spansion, and Macronix. All others scan only the first page.
+ */
+ if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+ (maf_id == NAND_MFR_SAMSUNG ||
+ maf_id == NAND_MFR_HYNIX))
+ chip->bbt_options |= NAND_BBT_SCANLASTPAGE;
+ else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+ (maf_id == NAND_MFR_SAMSUNG ||
+ maf_id == NAND_MFR_HYNIX ||
+ maf_id == NAND_MFR_TOSHIBA ||
+ maf_id == NAND_MFR_AMD ||
+ maf_id == NAND_MFR_MACRONIX)) ||
+ (mtd->writesize == 2048 &&
+ maf_id == NAND_MFR_MICRON))
+ chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
+}
+
+/*
* Get the flash and manufacturer id and lookup if the type is supported.
*/
static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
@@ -3087,6 +3124,8 @@ ident_done:
return ERR_PTR(-EINVAL);
}
+ nand_decode_bbm_options(mtd, chip, id_data);
+
/* Calculate the address shift from the page size */
chip->page_shift = ffs(mtd->writesize) - 1;
/* Convert chipsize to number of pages per chip -1 */
@@ -3103,33 +3142,6 @@ ident_done:
chip->badblockbits = 8;
- /* Set the bad block position */
- if (mtd->writesize > 512 || (busw & NAND_BUSWIDTH_16))
- chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
- else
- chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
-
- /*
- * Bad block marker is stored in the last page of each block
- * on Samsung and Hynix MLC devices; stored in first two pages
- * of each block on Micron devices with 2KiB pages and on
- * SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix.
- * All others scan only the first page.
- */
- if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
- (*maf_id == NAND_MFR_SAMSUNG ||
- *maf_id == NAND_MFR_HYNIX))
- chip->bbt_options |= NAND_BBT_SCANLASTPAGE;
- else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
- (*maf_id == NAND_MFR_SAMSUNG ||
- *maf_id == NAND_MFR_HYNIX ||
- *maf_id == NAND_MFR_TOSHIBA ||
- *maf_id == NAND_MFR_AMD ||
- *maf_id == NAND_MFR_MACRONIX)) ||
- (mtd->writesize == 2048 &&
- *maf_id == NAND_MFR_MICRON))
- chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
-
/* Check for AND chips with 4 page planes */
if (chip->options & NAND_4PAGE_ARRAY)
chip->erase_cmd = multi_erase_cmd;