diff options
Diffstat (limited to 'drivers/mtd/nand/nand_base.c')
| -rw-r--r-- | drivers/mtd/nand/nand_base.c | 9 |
1 files changed, 5 insertions, 4 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c index 3ed9c5e4d34e..8a393f9e6027 100644 --- a/drivers/mtd/nand/nand_base.c +++ b/drivers/mtd/nand/nand_base.c @@ -2588,7 +2588,7 @@ int nand_erase_nand(struct mtd_info *mtd, struct erase_info *instr, instr->state = MTD_ERASING; while (len) { - /* Heck if we have a bad block, we do not erase bad blocks! */ + /* Check if we have a bad block, we do not erase bad blocks! */ if (nand_block_checkbad(mtd, ((loff_t) page) << chip->page_shift, 0, allowbbt)) { pr_warn("%s: attempt to erase a bad block at page 0x%08x\n", @@ -3132,8 +3132,8 @@ ident_done: * Bad block marker is stored in the last page of each block * on Samsung and Hynix MLC devices; stored in first two pages * of each block on Micron devices with 2KiB pages and on - * SLC Samsung, Hynix, Toshiba and AMD/Spansion. All others scan - * only the first page. + * SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix. + * All others scan only the first page. */ if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) && (*maf_id == NAND_MFR_SAMSUNG || @@ -3143,7 +3143,8 @@ ident_done: (*maf_id == NAND_MFR_SAMSUNG || *maf_id == NAND_MFR_HYNIX || *maf_id == NAND_MFR_TOSHIBA || - *maf_id == NAND_MFR_AMD)) || + *maf_id == NAND_MFR_AMD || + *maf_id == NAND_MFR_MACRONIX)) || (mtd->writesize == 2048 && *maf_id == NAND_MFR_MICRON)) chip->bbt_options |= NAND_BBT_SCAN2NDPAGE; |